The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Jan. 13, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Mengmeng Yang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a substrate; and a plurality of capacitor structures arranged on a surface of the substrate. Each of the plurality of capacitor structures extends in a first direction. The first direction is parallel to the surface of the substrate. Each of the plurality of capacitor structures includes a lower electrode layer, a capacitor dielectric layer and an upper electrode layer. The lower electrode layer is provided with a U-shaped groove. The U-shaped groove is at least completely filled with the capacitor dielectric layer and the upper electrode layer. The capacitor dielectric layer is arranged between the lower electrode layer and the upper electrode layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile