The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Nov. 17, 2023
L'air Liquide, Societe Anonyme Pour L'etude ET L'exploitation Des Procedes Georges Claude, Paris, FR;
Nathan Stafford, Newark, DE (US);
Abstract
A method for forming a structure using a patterned mask layer comprises introducing an etching gas containing a sulfur-containing gas into a reaction chamber, converting the etching gas to a plasma, and allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films so that the one or more silicon-containing films are selectively etched versus the patterned mask layer to form the structure, wherein the sulfur-containing gas contains a —SH thiol group and an aromatic 6 membered carbon ring having the formula wherein R1, R2, R3, R4 and R5 are independently selected from F, H, and/or CFHgroup substituted on the aromatic ring, where x, y and z are integers, and at least one of the R1, R2, R3, R4 and R5 contains at least one fluorine atom, and S represents the —SH thiol group.