The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Jul. 08, 2024
Applicant:
Ememory Technology Inc., Hsin-Chu, TW;
Inventors:
Wei-Chiang Ong, Hsinchu County, TW;
Hsueh-Wei Chen, Hsinchu County, TW;
Assignee:
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); G11C 16/08 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H10D 30/68 (2025.01);
Abstract
A non-volatile memory with an auxiliary select gate line driver is provided. The array structure of the non-volatile memory comprises plural 2T2C memory cells in an array arrangement. The memory cells in the array structure are connected with the corresponding auxiliary select gate lines. The auxiliary select gate line driver can output specified driving voltages to the auxiliary select gate lines. Consequently, the programming efficiency, the erasing efficiency and the reading efficiency of non-volatile memory are enhanced.