The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Mar. 25, 2024
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Teng Zhou, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A method of operating a memory system includes performing a first read operation with a first read voltage of a first single read level, performing a first shift-read operation with the first read voltage plus a first offset voltage, performing a second shift-read operation with the first read voltage minus the first offset voltage, and in response to that a difference between first bit flip information of the first shift-read operation and second bit flip information of the second shift-read operation is equal to or lower than a threshold, determining that the first read voltage is a first optimal read voltage. The first single read level of a first page is under a multi-level architecture.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile