The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Mar. 10, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Benjamin Bernard, Villach, AT;

Alexander Binter, Villach, AT;

Heimo Graf, Trebesing, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); B23K 26/06 (2014.01); B23K 26/0622 (2014.01); B23K 26/067 (2006.01); B23K 26/073 (2006.01); B28D 5/00 (2006.01); H01L 21/268 (2006.01); H01L 21/78 (2006.01); B23K 103/00 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); B23K 26/0608 (2013.01); B23K 26/0622 (2015.10); B23K 26/0665 (2013.01); B23K 26/0676 (2013.01); B23K 26/0734 (2013.01); B28D 5/0011 (2013.01); H01L 21/268 (2013.01); H01L 21/78 (2013.01); B23K 2103/56 (2018.08); H01L 21/0475 (2013.01);
Abstract

A method of splitting a semiconductor work piece includes: forming a separation zone within the semiconductor work piece, wherein forming the separation zone comprises modifying semiconductor material of the semiconductor work piece at a plurality of targeted positions within the separation zone in at least one physical property which increases thermo-mechanical stress within the separation zone relative to a remainder of the semiconductor work piece, wherein modifying the semiconductor material in one of the targeted positions comprises focusing at least two laser beams to the targeted position; and applying an external force or stress to the semiconductor work piece such that at least one crack propagates along the separation zone and the semiconductor work piece splits into two separate pieces. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.


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