The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Mar. 23, 2022
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Xinshu Cai, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10B 63/80 (2023.02); H10N 70/021 (2023.02);
Abstract

According to an aspect of the present disclosure, a memory device is provided. The memory device includes a dielectric layer having a top surface, a first electrode having a bottom surface, a switching layer, and a second electrode. The bottom surface of the first electrode is arranged below the top surface of the dielectric layer. The first electrode includes a first corner having a first acute angle and a second corner having a second acute angle arranged over the top surface of the dielectric layer. The switching layer is arranged over the first electrode. The second electrode is arranged over the switching layer, and at least the first corner of the first electrode extends into the second electrode.


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