The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Dec. 30, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Kisik Choi, Watervliet, NY (US);
Brent A Anderson, Jericho, VT (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
John Christopher Arnold, North Chatham, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a field effect transistor (FET) including a first source-drain region, a second source-drain region, a gate between the first and second source-drain regions, and a channel region under the gate and between the first and second source-drain regions. Also included are a front side wiring network, having a plurality of front side wires, on a front side of the field effect transistor; a front side conductive path electrically interconnecting one of the front side wires with the first source-drain region; a back side power rail, on a back side of the FET; and a back side contact electrically interconnecting the back side power rail with the second source-drain region. A dielectric liner and back side dielectric fill are on a back side of the gate adjacent the back side contact, and they electrically confine the back side contact in a cross-gate direction.