The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Feb. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
I-I Cheng, Tainan, TW;
Chen-Chieh Chiang, Kaohsiung, TW;
Kun-Ei Chen, Tainan, TW;
Pei-Lum MA, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a semiconductor device having an isolation structure with a protection layer. The semiconductor device includes a substrate, a transistor with a source/drain (S/D) structure on the substrate, and an isolation structure on the substrate and adjacent to the transistor. The isolation structure includes a dielectric structure on the substrate, a protection layer on the dielectric structure, and a gate structure on the protection layer. The protection layer is disposed between the gate structure and the S/D structure.