The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jul. 20, 2023
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Tzu-Yun Huang, Taichung, TW;

Chung-Hsien Liu, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/68 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H10D 30/6894 (2025.01); H10D 30/0411 (2025.01); H10D 64/017 (2025.01); G11C 16/0408 (2013.01);
Abstract

A semiconductor structure includes a substrate, a dielectric structure, a floating gate, and a control gate. The substrate has a protrusion, a first recess, and a second recess, wherein the first recess and the second recess are on opposite sides of the protrusion. The dielectric structure extends from the first recess and the second recess to above a top surface of the protrusion. The floating gate is disposed over the substrate and adjoins a sidewall of the dielectric structure. The control gate is disposed over the floating gate and extends over a top surface of the dielectric structure to directly above the protrusion.


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