The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jul. 06, 2022
Super Group Semiconductor Co., Ltd., Hsinchu County, TW;
Hsiu-Wen Hsu, Hsinchu County, TW;
SUPER GROUP SEMICONDUCTOR CO., LTD., Hsinchu County, TW;
Abstract
A trench power semiconductor component and a method for manufacturing the same are provided. The trench power semiconductor component includes an epitaxial layer having a trench, a bottom insulating layer, a gate insulating layer, a shielding electrode disposed in the trench, a gate, and a separation structure that includes a covering portion and a spacer portion. The gate is disposed on and separated from the shielding electrode by the separation structure. The covering portion covers a top portion of the shielding electrode and the bottom insulating layer, is connected to the gate insulating layer, and defines a recessed region. The spacer portion is disposed in the recessed region, and includes a main filling portion that closes off the recessed region and a first barrier portion located between the main filling portion and the covering portion. The main filling and the first barrier portion are made of different materials.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile