The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Aug. 30, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventor:
Santosh Sharma, Austin, TX (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H03K 17/687 (2006.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H03K 17/6871 (2013.01); H10D 62/8503 (2025.01);
Abstract
Embodiments of the present disclosure provide a semiconductor device, including: a high electron mobility transistor (HEMT) bidirectional switch including: a first source at a first potential; a second source at a second potential different than the first potential; and a substrate; and a biasing circuit, coupled to the first source of the bidirectional switch and the second source of the bidirectional switch, for biasing the substrate at a potential equal to the lower of the first potential of the first source of the bidirectional switch and the second potential of the second source of the bidirectional switch.