The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jun. 03, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Alec Dorfner, Fort Ann, NY (US);
Minjoon Park, Watervliet, NY (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 21/311 (2006.01); H10B 12/00 (2023.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01); H10B 99/00 (2023.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10B 41/35 (2023.02); H01L 21/31144 (2013.01); H10B 12/20 (2023.02); H10B 43/35 (2023.02); H10B 99/00 (2023.02); H10D 88/00 (2025.01);
Abstract
A method for forming a semiconductor device includes forming a first metal layer on top of an amorphous mask layer disposed over a substrate, forming a second metal layer that covers vertical sidewalls of openings in the amorphous mask layer, and etching a pattern in the substrate using the first metal layer and the second metal layer as an etch mask.
Dorfner, Alec. (2026). Metal hardmasks (U.S. Patent No. 12526990). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12526990
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile