The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Sep. 23, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Moonyoung Jeong, Suwon-si, KR;

Kiseok Lee, Suwon-si, KR;

Hyungeun Choi, Suwon-si, KR;

Hyungjun Noh, Suwon-si, KR;

Sangho Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02);
Abstract

A semiconductor device may include a substrate including a memory cell region between a first connection region and a second connection region, gate electrodes extending in a first direction and including first pad regions having a step structure on the first connection region, back gate electrodes between the gate electrodes and extending in a direction opposite the first direction, vertical conductive patterns extending in a vertical direction and spaced apart from each other in the first direction on the memory cell region of the substrate, and active layers between the gate electrodes and the back gate electrodes on the memory cell region of the substrate. The active layers may extend in a second direction, intersecting the first direction, and may be electrically connected to the vertical conductive patterns. The back gate electrodes may include second pad regions having a step structure on the second connection region.


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