The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jul. 14, 2020
Applicant:

Tsinghua University, Beijing, CN;

Inventors:

Feng Pan, Beijing, CN;

Rongxuan Su, Beijing, CN;

Fei Zeng, Beijing, CN;

Junyao Shen, Beijing, CN;

Sulei Fu, Beijing, CN;

Assignee:

TSINGHUA UNIVERSITY, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/08 (2006.01); C23C 14/00 (2006.01); C23C 14/30 (2006.01); H03H 9/02 (2006.01); H03H 9/145 (2006.01); H03H 9/64 (2006.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
H03H 3/08 (2013.01); C23C 14/0036 (2013.01); C23C 14/30 (2013.01); H03H 9/02582 (2013.01); H03H 9/14538 (2013.01); H03H 9/64 (2013.01); H03H 3/02 (2013.01); H03H 2003/023 (2013.01);
Abstract

Disclosed are methods of preparing a Surface Acoustic Wave (SAW) device, comprising: sequentially depositing a Cu electrode, a silicon oxide film, modifying the surface of the silicon oxide film, and then depositing a piezoelectric film, and an Al electrode on a substrate having an interdigital (IDT) electrode pattern to obtain the SAW device. In some embodiments, the Cu and Al electrodes both have IDT electrode patterns corresponding to the IDT pattern of the substrate. Because the Sezawa wave mode that is adopted is formed by coupling film thickness vibration and transverse vibration, the present invention is characterized in that a longitudinal electric field and a transverse electric field are excited through the double-layer electrodes whereby the electromechanical coupling coefficient of the SAW device can be improved by changing the coupling pattern between the electric fields and the piezoelectric film.


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