The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jun. 03, 2024
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Saurabh Roy, Villach, AT;

Matteo Dainese, Munich, DE;

Michael Ehmann, Villach, AT;

Hiroshi Narahashi, Villach, AT;

Johanna Schlaminger, Villach, AT;

Katharina Teichmann, Munich, DE;

Sigrid Wabnig, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C23F 1/44 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 24/00 (2013.01); C23F 1/44 (2013.01); H01L 21/32134 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 2224/04026 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, a TiW layer arranged on the semiconductor substrate a Ti layer arranged on the TiW layer, a Ni alloy layer arranged on the Ti layer, and an Ag layer arranged on the Ni alloy layer, wherein the Ag layer and the Ni alloy layer comprise side faces fabricated by at least one wet etching process, and wherein the Ti layer and the TiW layer comprise side faces fabricated by a dry etching process.


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