The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jun. 07, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Chieh Yang, Zhubei, TW;

Yung-Chow Peng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/538 (2006.01); H01L 23/64 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/642 (2013.01); H01L 23/5223 (2013.01); H10D 1/042 (2025.01); H10D 1/716 (2025.01);
Abstract

A semiconductor device includes a capacitor having a first conductor plate, a second conductor plate, and a portion of a dielectric layer interposed therebetween. The semiconductor device includes a plurality of first contact structures in electrical contact with the first conductor plate. The semiconductor device includes a plurality of second contact structures in electrical contact with the second conductor plate. The plurality of first contact structures and the plurality of second contact structures are laterally arranged in a checkboard pattern, thereby causing each of the plurality of first contact structures to be surrounded by respective four of the plurality of second contact structures.


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