The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Aug. 17, 2021
United Microelectronics Corp., Hsinchu, TW;
Wen Wen Gong, Singapore, SG;
Xiaofei Han, Singapore, SG;
Chow Yee Lim, Singapore, SG;
Hong Liao, Singapore, SG;
Jun Qian, Singapore, SG;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor structure including the following steps is provided. A substrate is provided. The substrate has a first region and a second region. A stacked structure is formed on the substrate in the first region. The stacked structure includes a first dielectric layer, a charge storage layer, a second dielectric layer, a first conductive layer, and a first hard mask layer. A dielectric material layer is formed on the substrate in the second region. A second conductive layer is formed on the dielectric material layer in the second region. A first patterned photoresist layer is formed. The first hard mask layer exposed by the first patterned photoresist layer and a portion of the dielectric material layer exposed by the first patterned photoresist layer are removed by using the first patterned photoresist layer as a mask.