The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Mar. 08, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Chun Sum Yeung, San Jose, CA (US);

Deping He, Boise, ID (US);

Zhongyuan Lu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/52 (2006.01); G11C 11/406 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G11C 11/40622 (2013.01); G11C 29/022 (2013.01);
Abstract

Methods, systems, and devices for efficient read disturb scanning are described. A memory system may limit a quantity of word lines scanned as part of a read disturb scan. For example, the memory system may select a threshold quantity of word lines of a block for the read disturb scan based on a characterization of the word lines, such as selecting one or more word lines having higher bit error rates than other word lines of the block. The memory system may perform the read disturb scan on the selected one or more word lines to determine respective failure bit counts of the selected word lines and exclude unselected word lines of the block from the read disturb scan. The memory system may determine whether to perform a refresh operation on the block based on whether a respective failure bit count satisfies a threshold failure bit count.


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