The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Aug. 08, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Hsiang Yu Lee, Cupertino, CA (US);
Pradeep K. Subrahmanyan, Los Gatos, CA (US);
Takaya Matsushita, Tokyo, JP;
Changwoo Sun, Ontario, CA;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A three-dimensional (3D) NAND memory structure may include material layers arranged in a vertical stack including alternating horizontal insulating layers and wordline layers. The material layers may be etched to form a landing pad. A vertical wordline may extend through one or more of the horizontal wordline layers beneath the landing pad. The vertical wordline may be conductively connected to a top horizontal wordline, and the vertical wordline may be insulated from any of the horizontal wordlines that the vertical wordline extends through beneath the top horizontal wordline. A liner may also be formed over a top horizontal wordline at the landing pad.