The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Apr. 17, 2020
Applicant:

Showa Denko K.k., Tokyo, JP;

Inventor:

Kazuma Matsui, Tokyo, JP;

Assignee:

Resonac Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/12 (2006.01); C23F 1/02 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/465 (2006.01);
U.S. Cl.
CPC ...
C23F 1/12 (2013.01); C23F 1/02 (2013.01); H01L 21/30621 (2013.01); H01L 21/31116 (2013.01); H01L 21/32138 (2013.01); H01L 21/465 (2013.01);
Abstract

A metal removal method which includes: a reaction step of bringing a treatment gas containing a fluorine-containing interhalogen compound and a metal-containing material containing a metal element into contact with each other to generate metal fluoride which is a reaction product of the fluorine-containing interhalogen compound and the metal element; and a volatilization step of heating the metal fluoride under an inert gas atmosphere or in a vacuum environment for volatilization. The metal element is at least one kind selected from iron, cobalt, nickel, selenium, molybdenum, rhodium, palladium, tungsten, rhenium, iridium, and platinum. Also disclosed is a dry etching method using the metal removal method and a production method for a semiconductor element using the dry etching method.


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