The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jun. 07, 2024
Applicant:

Obsidian Sensors, Inc., San Diego, CA (US);

Inventors:

John Hong, La Jolla, CA (US);

Tallis Chang, La Jolla, CA (US);

Edward Chan, La Jolla, CA (US);

Bing Wen, La Jolla, CA (US);

Yaoling Pan, La Jolla, CA (US);

Sean Andrews, San Diego, CA (US);

Assignee:

OBSIDIAN SENSORS, INC., San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); G01J 5/20 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00595 (2013.01); B81B 3/0081 (2013.01); B81C 1/0069 (2013.01); G01J 5/20 (2013.01); B81B 2201/0207 (2013.01); B81B 2203/019 (2013.01); B81C 2201/0105 (2013.01); B81C 2201/014 (2013.01);
Abstract

An electromechanical systems structure including: providing a stack, including a structural layer extending in a plane, a sidewall layer including a first portion lying in a plane parallel to the structural layer plane and a second portion lying in a plane transverse to the structural layer plane, an etch-stop layer, positioned between the sidewall layer and the structural layer, including an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and a mold comprising a wall parallel to the sidewall layer's second portion; etching the sidewall layer's first portion to expose the etch-stop layer; removing the mold; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer; removing the sidewall layer's second portion; and etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.


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