The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Oct. 05, 2021
Applicant:
Powdec K.k., Oyama, JP;
Inventors:
Assignee:
POWDEC K.K., Oyama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10D 30/675 (2025.01); H10D 30/475 (2025.01); H10D 30/6738 (2025.01); H10D 62/85 (2025.01); H10D 62/8503 (2025.01); H10D 64/64 (2025.01);
Abstract
This normally-off mode polarization super junction GaN-based field effect transistor has an undoped GaN layer, an AlGaN layer(0<x<1), an island-like undoped GaN layer, a p-type GaN layer, a p-type InGaN layer(0<y<1), a gate electrodeon the p-type InGaN layerand a source electrodeand a drain electrodeon the AlGaN layer. When the polarization charge amount of the hetero-interface between the AlGaN layerand the undoped GaN layerand the hetero-interface between the AlGaN layerand the undoped GaN layeris denoted as Nand the thickness of the AlGaN layeris denoted as d, Nd≤2.64×10[cmnm] is satisfied.