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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12520511 B1

PDFFull Text
Date of Patent:
Jan. 06, 2026

Filed:

Apr. 03, 2023

High electron mobility transistor structure including passivation capping layer and method of manufacturing the same

Applicant:

Globalwafers Co., Ltd., Hsinchu, TW;

Inventors:

Jia-Zhe Liu, Hsinchu, TW;

Tzu-Yao Lin, Hsinchu, TW;

Assignee:

GLOBALWAFERS CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

John P Dulka

Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 22/14 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01);
Abstract

A method of manufacturing a high electron mobility transistor (HEMT) structure is disclosed. By controlling a passivation layer and a barrier layer to uninterruptedly grow in the same growth chamber, defects of the passivation layer generated in the growth process due to a drastic change in temperature, pressure, or atmosphere or degrading a quality of an interface between the passivation layer and the barrier layer could be avoided, thereby providing the passivation layer with a good quality and the interface between the passivation layer and the barrier layer with a good quality, so that the objective of improving the performance of the HEMT structure could be achieved.

Find Patent Forward Citations

Liu, Jia-Zhe. (2026). High electron mobility transistor structure including passivation capping layer and method of manufacturing the same (U.S. Patent No. 12520511). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12520511

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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