Method for fabricating semiconductor structure and semiconductor structure

Abstract

Embodiments relate to a method for fabricating a semiconductor structure and a semiconductor structure. The method includes: providing a substrate, and forming an initial stack structure on the substrate, where the initial stack structure includes a first dielectric layer and a target semiconductor layer alternately stacked in sequence along a first direction adjacent to the substrate; forming, in the initial stack structure, a first trench isolation structure, a second trench isolation structure and a third trench isolation structure arranged at intervals along a second direction and extending along a third direction; forming two spaced gate trenches whose bottom surfaces contact an upper surface of the substrate, where a part of the target semiconductor layer positioned in the gate trench is exposed and suspended; and forming gate structures surrounding the target semiconductor layer in the gate trenches.