The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Apr. 27, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); H01L 21/561 (2013.01); H01L 21/76898 (2013.01); H01L 24/19 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/14335 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1437 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/1443 (2013.01); H01L 2924/1444 (2013.01); H01L 2924/182 (2013.01); H01L 2924/186 (2013.01);
Abstract
A method of manufacturing a semiconductor package includes: hybrid-bonding a semiconductor chip, including a through-silicon via, to an upper surface of a semiconductor wafer, wet-etching a surface of the semiconductor chip to expose the through-silicon via, covering the exposed through-silicon via with a material, including an organic resin and an inorganic filler, to form an encapsulation layer, removing an upper surface of the encapsulation layer to expose the through-silicon via, and forming a redistribution structure electrically connected to the through-silicon via.