The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Jul. 19, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;

Inventors:

Sung-Ju Huang, Taipei, TW;

Kuang-Wei Cheng, Hsinchu, TW;

Yeh-Chieh Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67017 (2013.01); H01L 21/324 (2013.01); H01L 21/67109 (2013.01);
Abstract

A method of curing or otherwise processing semiconductor wafers in an environmentally controlled process chamber includes: loading a plurality of semiconductor wafers into the process chamber such that pairs of adjacent semiconductor wafers are spaced apart from one another by gaps therebetween; introducing a process gas into the process chamber containing the plurality of semiconductor wafers; and drawing gas from the process chamber through one or more exhaust manifolds. Suitably, each exhaust manifold includes a plurality of inlet orifices through which gas is drawn into the exhaust manifold, at least one of the inlet orifices facing and aligning with each of the gaps.


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