The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Mar. 02, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Aaron P. Boehm, Boise, ID (US);

David Hulton, Seattle, WA (US);

Jeremy Chritz, Seattle, WA (US);

Tamara Schmitz, Scotts Valley, CA (US);

Max S. Vohra, Seattle, WA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 21/55 (2013.01);
U.S. Cl.
CPC ...
G06F 21/554 (2013.01); G06F 2221/034 (2013.01);
Abstract

Methods, systems, and devices for voltage input and clock speed change determination to detect an attack are described. In some systems, a memory device may receive first signaling indicative of a first value for an input (e.g., voltage input, clock speed) to the memory device. The memory device may further receive second signaling indicative of a second (e.g., time-delayed) value for the input to the memory device. The memory device may detect a change to the input based on the first signaling and the second signaling. For example, the memory device may compare the first signaling to the second signaling, may compare a difference between the first signaling and the second signaling to a threshold, or both. If the input changes (e.g., by a threshold amount), the memory device may disable one or more features to protect against an attack on the memory device.


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