The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Sep. 29, 2022
Fujifilm Corporation, Tokyo, JP;
Hironori Oka, Haibara-gun, JP;
Michihiro Shirakawa, Haibara-gun, JP;
Mitsuhiro Fujita, Haibara-gun, JP;
Kazunari Yagi, Haibara-gun, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A pattern forming method produces a pattern having excellent LER performance. Additionally, an actinic ray-sensitive or radiation-sensitive composition and a method for manufacturing an electronic device, which relate to the pattern forming method are disclosed. The pattern forming method includes: exposing a resist film, the resist film including an acid-decomposable group a which reacts to generate a polar group having a pKa of 6.0 or more, an acid-decomposable group b which reacts to generate a polar group having a pKa of less than 6.0, and a photoacid-generating component, a first heating step for reacting at least a part of the acid-decomposable group a with an acid to generate the polar group having a pKa of 6.0 or more, a second heating step for reacting at least a part of the acid-decomposable group b to generate the polar group having a pKa of less than 6.0, and a development step.