The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Aug. 28, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Takumi Honda, Koshi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/04 (2006.01); C23F 1/44 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C09K 13/04 (2013.01); C23F 1/44 (2013.01); H01L 21/306 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/67075 (2013.01); H01L 21/67086 (2013.01); H01L 21/67253 (2013.01); H01L 21/67294 (2013.01);
Abstract

A substrate processing apparatus includes a substrate processing unit and a controller. The substrate processing unit is configured to perform an etching processing on one or more substrates each having a silicon nitride film and a silicon oxide film on a surface thereof with a processing liquid containing a phosphoric acid aqueous solution and a silicic acid compound. The controller is configured to control individual components of the substrate processing apparatus. The controller includes a concentration control unit configured to control a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film falls within a given range from a beginning of the etching processing to an end thereof.


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