The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Mar. 09, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jonghoon Kim, Suwon-si, KR;
Suk Koo Hong, Suwon-si, KR;
Young Gyu Kim, Gunpo-si, KR;
Jooyoung Song, Suwon-si, KR;
Hae Min Yang, Seoul, KR;
Gumhye Jeon, Suwon-si, KR;
Juhee Kim, Seoul, KR;
Sunah Lee, Seoul, KR;
Ahhyun Lee, Seoul, KR;
Hong Won Lee, Seoul, KR;
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07C 205/06 (2006.01); G03F 7/004 (2006.01); G03F 7/029 (2006.01); G03F 7/038 (2006.01);
U.S. Cl.
CPC ...
C07C 205/06 (2013.01); G03F 7/0048 (2013.01); G03F 7/029 (2013.01); G03F 7/0382 (2013.01);
Abstract
A photoresist composition, a method of forming a pattern, and a method of synthesizing 6-nitrochrysene, the photoresist composition includes a polymer resin; a photo acid generator; a quencher; an organic solvent; and an etching resistance enhancer, wherein the etching resistance enhancer is represented by the following Chemical Formula 1,