The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jan. 17, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Jia-Rong Wu, Kaohsiung, TW;
Rai-Min Huang, Taipei, TW;
Ya-Huei Tsai, Tainan, TW;
I-Fan Chang, Tainan, TW;
Yu-Ping Wang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H01F 10/32 (2006.01); H01F 41/34 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H01F 10/3254 (2013.01); H01F 41/34 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02); G11C 11/161 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a top electrode on the MTJ stack; performing a first patterning process to remove the MTJ stack along a first direction; and performing a second patterning process to remove the MTJ stack along a second direction to form MTJs on the substrate.