The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Feb. 14, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Jingwen Lu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Provided are a semiconductor structure and a method for manufacturing the same. The method includes the following operations. A trench is formed in a substrate. A sacrificial dielectric layer is filled in the trench. The sacrificial dielectric layer is etched gradually to gradually expose a sidewall of the trench, and at least part of the exposed sidewall of the trench is oxidized to form an oxide dielectric layer, in which a thickness of the oxide dielectric layer in the trench gradually increases in a direction extending from a bottom to an opening of the trench. A conductive layer is formed on a surface of the oxide dielectric layer and the conductive layer is formed in the trench.