The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Mar. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Shih-Yen Lin, New Taipei, TW;
Po-Cheng Tsai, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A semiconductor device includes a substrate, a 2-D material channel layer, a 2-D material passivation layer, source/drain contacts, and a gate structure. The 2-D material channel layer is over the substrate, wherein the 2-D material channel layer is made of graphene. The 2-D material passivation layer is over the 2-D material channel layer, wherein the 2-D material passivation layer is made of transition metal dichalcogenide (TMD). The source/drain contacts are over the 2-D material passivation layer. The gate structure is over the 2-D material passivation layer and between the source/drain contacts.