The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Oct. 27, 2022
Applicant:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Inventor:

Richard Schultz, Fort Collins, CO (US);

Assignee:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 62/118 (2025.01); H10D 62/213 (2025.01);
Abstract

The disclosed integrated circuit for offset cross field effect transistors can include a first transistor include a first channel oriented in a first direction; an oxide layer adjacent to the first transistor; and a second transistor adjacent to the oxide layer. The second transistor can include a second channel that is oriented in a direction orthogonal to the first direction, and the first channel and the second channel can be laterally offset such that the second channel does not cross over the first channel. Various other apparatuses, systems, and methods are also disclosed.


Find Patent Forward Citations

Schultz, Richard. (2025). Apparatuses and systems for offset cross field-effect transistors (U.S. Patent No. 12513943). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12513943

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…