Method of manufacturing a semiconductor device and a semiconductor device

Abstract

A method of manufacturing a semiconductor device includes forming a fin structure protruding from a first isolation insulating layer disposed over a substrate, and forming a dummy gate structure over an upper portion of the fin structure. The method further includes forming a second isolation insulating layer over the first isolation insulating layer and forming gate sidewall spacers on opposing side faces of the dummy gate structure. The method also includes after the gate sidewall spacers are formed, forming a trench by etching a source/drain region of the fin structure and forming a base semiconductor epitaxial layer in the trench. The method further includes forming a cap semiconductor epitaxial layer on the base semiconductor epitaxial layer, removing the dummy gate structure to expose the fin structure, and forming a gate dielectric layer over a channel region of the fin structure.