The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jan. 14, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Daimotsu Kato, Kawasaki Kanagawa, JP;
Hiroshi Ono, Tokyo, JP;
Tatsuo Shimizu, Tokyo, JP;
Yosuke Kajiwara, Yokohama Kanagawa, JP;
Aya Shindome, Yokohama Kanagawa, JP;
Akira Mukai, Kawasaki Kanagawa, JP;
Po-Chin Huang, Tokyo, JP;
Masahiko Kuraguchi, Yokohama Kanagawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first member, and a first insulating member. The first semiconductor layer includes AlGaN (0≤x<1). The first semiconductor layer includes first, second, third, fourth, fifth, and sixth partial regions. The second semiconductor layer includes AlGaN (0<x—1, x<x). The second semiconductor layer includes first and second semiconductor portions. The first insulating member includes a first insulating region and includes a first material. The first insulating region contacts the third partial region and a part of the third electrode. The first member includes a first portion and includes a second material different from the first material. The first portion is between the fourth partial region and an other part of the third electrode.