The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Sep. 27, 2022
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Yong Li, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application relates to a method for improving the bridging defects between a source/drain epitaxial layer and a gate, and relates to a semiconductor integrated circuit technology. By adding a process of etching an insulating layer between lower portions of fins after an etching process of forming a polysilicon gate row, then forming sidewalls and a hard mask layer, and then forming a source/drain epitaxial layer, due to the added process of etching the insulating layer between the lower portions of the fins, holes located under the epitaxial layer and the polysilicon gate are therefore isolated, avoiding bridging defects between the polysilicon of the gate structure and the source/drain epitaxial layer, thus improving the performance of the device.