The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Sep. 16, 2022
Huawei Technologies Co., Ltd., Guangdong, CN;
HUAWEI TECHNOLOGIES CO., LTD., Shenzhen, CN;
Abstract
An insulated gate bipolar transistor (IGBT), a motor control unit, and a vehicle are disclosed. The insulated gate bipolar transistor includes three device structure feature layers that are laminated. An IGBT device structure feature layer and an RC-IGBT device structure feature layer are respectively arranged on two sides of an SJ device structure feature layer. The RC-IGBT device structure feature layer includes a collector and a drain that are disposed at a same layer. The insulated gate bipolar transistor further includes a first metal electrode laminated with and electrically connected to the collector, and a second metal electrode laminated with and electrically connected to the drain, and the first metal electrode is electrically isolated from the second metal electrode.