Method for forming semiconductor device and semiconductor device

Abstract

A method for forming a semiconductor device includes: providing a substrate and a stacked structure covering the substrate and including alternately stacked dielectric layers and sacrificial layers; forming multiple isolation layers extending in a first direction and arranged in a second direction in the stacked structure, the first direction being perpendicular to the substrate surface and the second direction being perpendicular to the first direction; forming a bit line between two adjacent ones of the isolation layers and removing the sacrificial layers; forming capacitor via holes along a third direction at vacancies of the dielectric structure formed after removing the sacrificial layers, the third, first and second directions being perpendicular; forming transistors and capacitors sequentially in the capacitor via holes based on bit lines, the capacitors being parallel to the substrate surface; and forming a word line extending in the second direction between two adjacent ones of the transistors.