The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jun. 06, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Lin Tang, Hefei, CN;
Mingguang Zuo, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for manufacturing a semiconductor structure includes the following operations. A substrate is provided. The substrate is provided with a first trench. A dielectric layer is formed on a bottom and sidewalls of the first trench. A first conductive layer is formed on the dielectric layer. A part of the first conductive layer is removed to expose the dielectric layer adjacent to an opening of the first trench. The remaining first conductive layer forms a second trench in the first trench. A bottom width of the second trench is smaller than its top width. A second conductive layer is formed in the first trench. A first growth rate of the second conductive layer on the first conductive layer is greater than a second growth rate of the second conductive layer on the dielectric layer. The semiconductor structure and a memory device are also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile