The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Mar. 06, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Chao Lin, Hefei, CN;
Xiaojie Li, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming a semiconductor structure includes: a base is provided, the base including a first area and a second area located outside the first area, the first area including stack structures and first isolation structures arranged alternately in a first direction, each stack structure including first semiconductor layers and second semiconductor layers stacked onto one another alternately in a third direction, the first direction being a direction in a plane where the base is located, the third direction intersecting with the plane where the base is located; the first semiconductor layers located in the first area, and the first isolation structures located in the first area and located in projection areas of the first semiconductor layers in the first direction are successively removed, to form active dummy connection layers extending in the first direction; and gate structures are formed on surfaces of the active dummy connection layers.