The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Aug. 29, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Changxin Jidian (Beijing) Memory Technologies Co., Ltd., Beijing, CN;
Mengmeng Yang, Hefei, CN;
Deyuan Xiao, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES CO., LTD., Beijing, CN;
Abstract
The present disclosure provides a method of manufacturing a capacitor, a capacitor, and a memory, and relates to the technical field of semiconductors. The method of manufacturing a capacitor includes: providing a substrate; forming a first electrode on the substrate, the first electrode extending in a first direction parallel to the substrate, a size of the first electrode in the first direction being greater than a size of the first electrode in a second direction and a size of the first electrode in a third direction, and every two of the first direction, the second direction, and the third direction being perpendicular to each other; forming a dielectric layer wrapping the first electrode; and forming a second electrode wrapping the dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile