The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Jul. 11, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventor:

Siva Kumar Chinthu, Bangalore, IN;

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018521 (2013.01);
Abstract

Disclosed structures include a single-stage and a multi-stage voltage level shifter. Each structure includes multiple transistors, which are optionally all symmetric low-voltage transistors, and the structures are configured to avoid operation outside the safe operating area (SOA) of such transistors. The single-stage voltage level shifter and the first stage of the multi-stage voltage level shifter can be essentially identical. In operation, input voltage pulses (including an input voltage pulse transitioning between a first positive voltage (V1) equal to the voltage rating of the transistors and ground) can be received at source nodes of N-type transistors and, in response, output voltage pulses (including an intermediate output voltage pulse transitioning between V1 and a second positive voltage (V2) that is higher than (e.g., double) V1 and an output voltage pulse that transitions between ground and V2) can be output.


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