The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Feb. 02, 2022
Applicant:

Nexperia B.v., Nijmegen, NL;

Inventors:

On Lok Chau, Nijmegen, NL;

Fei Wong, Nijmegen, NL;

Martin Li, Nijmegen, NL;

Hugo Wong, Nijmegen, NL;

Assignee:

Nexperia B.V., Nijmegen, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/14 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/565 (2013.01); H01L 23/3114 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/074 (2013.01); H01L 25/50 (2013.01); H01L 2224/214 (2013.01); H01L 2224/215 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device is provided, including a first die, such as a GaN HEMT die, and a second die, such as a MOSFET die, with the second die positioned on the top of the first die. The second die is attached using a die attach adhesive. The semiconductor device further includes an encapsulant deposited on the top of the semiconductor device. The encapsulant is covering the first die and the second die. Metalized vias are created within the encapsulant, and the metalized vias are arranged to distribute terminals of the first die and the terminals of the second die to the top side of the semiconductor device.


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