The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Nov. 04, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jihoon Kim, Suwon-si, KR;
Minki Kim, Suwon-si, KR;
Wonil Lee, Suwon-si, KR;
Hyuekjae Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises lower and upper structures. The lower structure includes a first semiconductor substrate, a first pad, and a first dielectric layer. The upper structure includes a second semiconductor substrate, a second pad, and a second dielectric layer. The upper and lower structures are bonded to each other to allow the first and second pads to come into contact each other and to allow the first and second dielectric layers to come into contact each other. A first interface between the first and second pads is at a level different from that of a second interface between the first and second dielectric layers. A first area of the first pad is greater than a second area of the second pad. A second thickness of the second pad is different from a first thickness of the first pad.