The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

May. 27, 2022
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Michael Todd Wyant, Dallas, TX (US);

Joseph O. Liu, Plano, TX (US);

Christopher Daniel Manack, Flower Mound, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/268 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/268 (2013.01); H01L 21/56 (2013.01); H01L 22/12 (2013.01); H01L 23/3107 (2013.01); H01L 23/495 (2013.01); H01L 24/48 (2013.01); H01L 2223/5446 (2013.01); H01L 2224/48245 (2013.01);
Abstract

A method includes performing a laser ablation process that removes a portion of a wafer to form a trench in a scribe region between adjacent die regions of the wafer, the trench extending from a first side of the wafer toward an opposite second side of the wafer, the trench extending through a metallization structure and an active circuit portion of the wafer, and a bottom of the trench spaced apart from the second side of the wafer. The method also includes performing a wafer expansion process that separates individual semiconductor dies from the wafer after the laser ablation process.


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