The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jul. 06, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Marcus Johannes Henricus Van Dal, Linden, BE;
Gerben Doornbos, Kessel-Lo, BE;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); B82Y 10/00 (2011.01); H01L 21/74 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/482 (2006.01); H01L 23/485 (2006.01); H01L 23/528 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/743 (2013.01); H01L 23/481 (2013.01); H10D 30/031 (2025.01); H10D 64/254 (2025.01); H10D 84/83 (2025.01); H10D 86/201 (2025.01); H01L 23/4825 (2013.01); H01L 23/485 (2013.01);
Abstract
The present disclosure relates to an integrated chip including a channel structure on a first substrate. A gate electrode overlies the channel structure. A first source/drain structure abuts the channel structure and is offset from the gate electrode. A conductive structure is disposed on the first substrate and underlies the first source/drain structure. A first contact extends from the first source/drain structure to the conductive structure.