The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Sep. 21, 2022
Changxin Memory Technologies, Inc., Anhui, CN;
Runping Wu, Hefei, CN;
Jun Zhang, Hefei, CN;
Li Ma, Hefei, CN;
Taegyun Kim, Hefei, CN;
Soonbyung Park, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for processing a semiconductor structure and a method for forming a word line structure are provided. The method for processing the semiconductor structure includes: providing a semiconductor structure including a groove and a metal layer located in the groove, where an edge position of a top surface of the metal layer is higher than a center position of the top surface of the metal layer; enabling the semiconductor structure to be in a rotating state; and performing at least one metal surface planarization process on the semiconductor structure, so that the top surface of the metal layer after being processed is more planar than the top surface of the metal layer before being processed. Each of the at least one metal surface planarization process includes: etching the top surface of the metal layer by a first reagent; and cleaning the semiconductor structure by a second reagent.