The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
May. 11, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jun Mo Park, Seoul, KR;
Kyu Bong Choi, Seoul, KR;
Yeon Ho Park, Seoul, KR;
Eun Sil Park, Hwaseong-si, KR;
Jin Seok Lee, Busan, KR;
Wang Seop Lim, Cheonan-si, KR;
Kyung In Choi, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a semiconductor device includes: forming first to third preliminary active patterns on a substrate to have different intervals therebetween, forming first and second field insulating layers between the first and second preliminary active patterns and between the second and third preliminary active patterns, respectively, and forming first to third gate electrodes respectively on first to third active patterns formed based on the first to third preliminary active patterns, separated by first and second gate isolation structures.