The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Jul. 07, 2023
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Soo Yeol Chai, Gyeonggi-do, KR;

Hee Joo Lee, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/4096 (2006.01); G11C 11/4078 (2006.01); G11C 11/4093 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 11/4078 (2013.01); G11C 11/4093 (2013.01);
Abstract

A memory device comprising: a memory cell array, and a controller configured to connect, in a first interval equal to or longer than a bit line setup interval, each of first and second bit lines, which are connected to cells respectively having first and second program states, to a node of a first permission voltage, connect, in the first interval, a third bit line, which is connected to a cell having a program prohibition state, to a node of a prohibition voltage, maintain, in a second interval that is equal to or shorter than a program pulse application interval, the respective connections of the first bit line and the third bit line, and disconnect, in the second interval, the second bit line from the node of the first permission voltage to apply the second bit line with a second permission voltage.


Find Patent Forward Citations

Loading…